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| Trigger Devices MA2B064 Silicon planar type trigger device Unit : mm Thyristor element 0.56 max. * Satisfactory symmetry of VBO * Large VO and small IBO I Absolute Maximum Ratings Ta = 25C Parameter Average total power dissipation Peak current*1 Operating ambient temperature*2 Symbol P(AV) IPM Topr Tstg Rating 150 2.0 100 -55 to +125 Unit mW A C C 4.5 max. 24 min. I Features 1.95 max. 24 min. Storage temperature Note) *1 : Ta < 50C, t = 10 s, repetitive frequency 60 Hz *2 : Maximum ambient temperature during operation DO-35 Package Marking Symbol: MA2B064 I Electrical Characteristics Ta = 25C Parameter Breakover current Breakover voltage*1 Output voltage*1 Symbol IBO VBO VO VBO *2 : Symmetry of VBO V = VBO I = IBO 28 4 7 0.1 3.5 Conditions Min Typ Max 50 36 Unit A V V %/C V Temperature coefficient of breakover voltage Breakover voltage deviation*2 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Measurement of VBO and VO VBO 30 k 70 k VO Amp. VBO' VBO 100 Vrms 0.068 F 20 Color indication (Blue) 1 MA2B064 VBO Ta 50 45 16 14 Trigger Devices VO Ta 1 000 800 Ta = 25C IBO VBO Breakover voltage VBO (V) Breakover current IBO (A) 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 2 0 Output voltage VO (V) 12 10 8 6 4 600 400 200 0 200 400 600 800 1 000 0 20 40 60 80 100 120 140 160 40 30 20 10 0 10 20 30 40 Ambient temperature Ta (C) Ambient temperature Ta (C) Breakover voltage VBO (V) 2 |
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